题目：Recent Development of Next Generation Memory Technology

姓名：Hong Li

 Emerging Memory Group, Micron Technology Inc., USA

时间：11月9日    18:00—20:00

地点：行政楼108会议室

A new era of computing technology is emerging as the Internet of Things (IoT) gradually rolls-out. It requires billions of devices to be connected and accessible at anytime, anywhere. While technologies discussed in IoT are often referred to networking, information, sensor etc, a critical component to enable all these is often taken by granted - that is memory technology, for both IoT devices as well as big data applications. The desired memory technology would be smaller, faster, as well as higher density and lower power consumption.

With this in mind, memory industry has been working on solutions for years. Some may not be exactly IoT driven, but the innovations happened to be heading along the same directions as IoT requires. This talk will discuss the fundamental memory device innovations that could be suitable for IoT. Specifically, high speed ReRAM (Resistive Random Access Memory) and 3D X-Point technologies developed by Micron Technology will be discussed.

•     Micron's ReRAM technology is the world first 16Gb non-volatile Cu based ReRAM fabricated at 27nm technology. It enables 200MB/s Write and 1GB/s Read in speed. The ReRAM cell with 16Gb integration scheme is capable of 105 cycles with Bit Error Rate (EBR) < 7x10-5. The array architecture is 6F2 and utilize a highly modified Buried Recessed Access Device (BRAD) coupled with arrayed epitaxial array that enables novel, self-aligned metal plugs contacting a Damascene Cu-ReRAM cell. The process flow also comes with Self-Aligned Cu Damascene based digital lines to fulfill low resistance interconnect requirement. 

•     MIcron's 3D X-Point technology was recently announced as a joint development innovation with Intel. It is an entirely new class of non-volatile memory that can be up to 1000 times faster and exponentially greater endurance than traditional NAND technology. This technology features unique material compounds for both selectors and memory cells and a 4F2 cross-point architecture with memory cell sit at the intersection of wordlines and bitlines, allowing the cells to be addressed individually. The first generation 3D X-Point is 128Gb per die across two stacked memory layers, based on a 20nm node. The future scaling will happen through both lithography shrinks and by increasing the number of layers.        

Biography:

Dr. Hong Li is currently an Emerging Memory Integration Engineer at Micron Technology Inc, USA working on development of next generation memory technology. He received his PhD degree in Electrical and Computer Engineering from University of California, Santa Barbara in 2012, working on carbon nanoelectronics. He has published over 40 papers (8 first author IEEE Transactions and 5 IEDM papers) and 1 book chapter.